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CHA2066
10-16GHz Low Noise Amplifier
GaAs Monolithic Microwave IC Description
The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form.
A B C D E NC G1 7272 NC G2 Vd
RFin
RFout
UMS
Main Features
Gain ( dB )
20 18 16 14 12 10 8 6 4 2 0 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Frequency ( GHz )
5 Noise Figure ( dB )
Broad band performance 10-16GHz 2.0dB noise figure, 10-16GHz 16dB gain, 0.5dB gain flatness Low DC power consumption, 50mA 20dBm 3rd order intercept point Chip size : 1,52 x 1,08 x 0.1mm
4
3
2
1
0
On wafer typical measurements.
Main Characteristics
Tamb = +25C Symbol NF G G Parameter Noise figure, 10-16GHz Gain Gain flatness 14 Min Typ 2.0 16 0.5 1.0 Max 2.5 Unit dB dB dB
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. : DSCHA20661257 -14-Sept-01
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2066
Electrical Characteristics
Tamb = +25C, Vd = +4V Symbol Parameter
10-16GHz Low Noise Amplifier
Test Condi tions
Min
Typ
Max
Unit
Fop G G NF VSWRin VSWRout IP3 P1dB Id
Operating frequency range Gain (1) Gain flatness (1) Noise figure (1) Input VSWR (1) Ouput VSWR ( 11 to 16 GHz ) (1) 3rd order intercept point Output power at 1dB gain compression Drain bias current (2)
10 14 16 0.5 2.0
16
Ghz dB
1.0 2.5 3.0:1 3.0:1
dB dB
20 10 45
dBm dBm mA
(1) These values are representative of on-wafer measurements that are made without bonding wires at the RF ports. When the chip is attached with typical 0.3nH input and output bonding wires, the indicated parameter values should be improved. (2) This current is the typical value from the low noise low consumption biasing ( B & D grounded ).
Absolute Maximum Ratings (1)
Tamb = +25C Symbol Vd Pin Top Tstg Parameter (1) Drain bias voltage (3) Maximum peak input power overdrive (2) Operating temperature range Storage temperature range Values 4.5 +15 -40 to +85 -55 to +125 Unit V dBm C C
(1) Operation of this device above anyone of these paramaters may cause permanent damage. (2) Duration < 1s. (3) For a typical biasing circuit : B & D grounded. See chip biasing option page 7/8.
Ref. : DSCHA20661257 -14-Sept-01
2/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
10-16GHz Low Noise Amplifier
Typical Results
Chip Typical Response ( On wafer Sij ) :
CHA2066
Tamb = +25C Vd = 4.0V ; Vg1 = Vg2 = +1.4Volt ; Id = 45mA ( A,B,C,D & E not connected ) Freq GHz
1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 13.00 14.00 15.00 16.00 17.00 18.00 19.00 20.00 21.00 22.00 23.00 24.00 25.00 26.00
MS11 dB
-0.25 -0.54 -0.88 -1.38 -2.32 -4.51 -8.90 -12.32 -10.70 -8.32 -7.00 -6.48 -6.63 -7.33 -8.51 -9.93 -11.00 -11.11 -10.35 -9.53 -8.97 -9.04 -9.70 -10.97 -12.61 -14.42
PS11
-16.1 -31.8 -48.8 -68.9 -95.1 -131.2 -177.3 122.2 61.8 24.9 -1.8 -23.4 -42.1 -58.2 -71.5 -79.7 -82.6 -83.8 -88.5 -100.1 -117.1 -137.0 -161.0 174.2 144.5 110.6
MS12 dB
-82.22 -83.38 -84.02 -72.90 -62.06 -52.22 -45.23 -41.37 -39.16 -37.57 -36.41 -35.43 -34.71 -34.27 -34.16 -34.42 -35.18 -36.29 -37.52 -38.26 -37.98 -36.56 -35.28 -34.49 -34.15 -34.37
PS12
90.1 37.9 17.8 21.7 8.4 -25.9 -71.4 -112.2 -144.4 -170.5 168.3 149.3 131.5 114.2 98.4 83.4 70.8 61.5 58.2 59.5 64.4 64.7 56.8 47.1 36.2 24.8
MS21 dB
-46.86 -46.99 -30.57 -12.70 -1.44 7.98 13.83 16.32 17.19 17.48 17.54 17.55 17.53 17.44 17.23 16.85 16.29 15.59 14.75 13.82 12.71 11.36 9.72 7.77 5.59 3.10
PS21
-148.0 -169.6 -13.6 -58.0 -96.2 -145.4 154.7 100.4 56.4 20.2 -10.5 -38.0 -63.6 -88.2 -112.3 -135.9 -158.6 179.4 158.2 137.2 115.9 95.5 75.4 56.6 39.2 23.8
MS22 dB
-0.07 -0.15 -0.67 -1.41 -1.47 -2.17 -3.17 -4.01 -4.90 -5.99 -7.27 -8.87 -10.85 -12.73 -13.16 -11.71 -9.84 -8.29 -7.17 -6.34 -5.86 -5.47 -5.35 -5.37 -5.41 -5.70
PS22
-7.1 -14.8 -24.3 -26.7 -33.3 -41.3 -46.2 -50.1 -53.3 -56.8 -59.4 -60.5 -57.5 -46.1 -27.4 -13.0 -8.5 -9.4 -13.1 -18.1 -23.7 -29.3 -34.7 -39.3 -43.4 -46.2
Ref. : DSCHA20661257 -14-Sept-01
3/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2066
Typical Results
Chip Typical Response ( On wafer Sij ) :
10-16GHz Low Noise Amplifier
Tamb = +25C Vd = 4.0V ; Vg1 = Vg2 = +1.4Volt ; Id = 45mA ( A,B,C,D & E not connected )
20 15 Gain, RLoss ( dB ) 10 5
Gain dBS22 dBS11
0 -5 -10 -15 -20 2 4 6 8 10 12 14 16 18 20 22 24 26 Frequency ( GHz )
Typical Gain and Matching measurements on wafer.
20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 10 11 12 13
Gain, NF ( dB )
GAIN
NF
Gab
14 15 16 Frequency ( GHz )
17
18
19
20
Typical Gain and Noise Figure measurements on wafer.
Ref. : DSCHA20661257 -14-Sept-01
4/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
10-16GHz Low Noise Amplifier
Typical Test-Jig Results
CHA2066
Circuit Typical Response ( Test-Jig ) :
Tamb = +25C
20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20
5 6 7 8
Vd = 4.0V ; B & E Pads grounded ; Id = 55mA ( Vg1 & Vg2 NC )
Gain & NF & RLoss ( dB )
dBS11
dBS21
dBS22
Gab
Nf_C
9
10
11
12
13
14
15
16
17
18
19
20
Frequency ( GHz )
Typical Linear measurements in test-jig.
20 18 16 14 12 10 8 6 4 2 0 -2 -16 -14 -12 -10 -8 -6 -4 Pin ( dBm ) at 12GHz 20 18 16 14 12 10 8 6 4 2 0 -2 0 -16 -14 -12 -10 -8 -6 -4 Pin ( dBm ) at 16GHz
Pout Gain
Pout Gain
-2
-2
0
Typical Output Power measurements in test-jig.
Ref. : DSCHA20661257 -14-Sept-01
5/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2066
10-16GHz Low Noise Amplifier
Chip schematic and Pad Identification
1520m
G1
7272
NC
G2
Vd
2k 1k
2k 1k
35
20
1080m RFout
RFin
10 11 23 8
15 15
6
UMS
E NC
A
B
C
D
Pad size 100x100m, chip thickness 100m
Dimensions : 1520 x 1080m 35m
1025 875 115
1010
410
410
225 455 605 755 905 35 1450
Ref. : DSCHA20661257 -14-Sept-01
6/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
10-16GHz Low Noise Amplifier
Typical Chip Assembly
C = 100pF Vd
CHA2066
IN OUT B E
Chip Biasing options
This chip is self-biased, and flexibility is provided by the access to number of pads. the internal DC electrical schematic is given in order to use these pads in a safe way.
The two requirements are : N1 : Not exceed Vds = 3.5Volt ( internal Drain to Source voltage ). N2 : Not biased in such a way that Vgs becomes positive. ( internal Gate to Source voltage ) We propose two standard biasing : Low Noise and low consumption :
Vd = 4V and B & D grounded. All the other pads non connected ( NC ). Idd = 45mA & Pout-1dB = +10dBm Typical. ( Equivalent to A,B,C,D,E : NC and Vd=4V ; G1=+1.4V ; G2=+1.4V). Low Noise and high output power : Vd = 4V and B & E grounded. All the other pads non connected ( NC ). Idd = 55mA & Pout-1dB = +13dBm Typical. ( Equivalent to A,B,C,D,E : NC and Vd=5V ; G1=+1.4V ; G2=+4.0V). A file is available on request to help the biasing option tuning.
Ref. : DSCHA20661257 -14-Sept-01
7/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2066
10-16GHz Low Noise Amplifier
Ordering Information
Chip form : CHA2066-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref. : DSCHA20661257 -14-Sept-01
8/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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